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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD898 DESCRIPTION *With TO-3 package *Built-in damper diode *High voltage ,high power dissipation *Wide area of safe operation APPLICATIONS *For TV horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 1500 6 3 3.5 50 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage CONDITIONS IE=200mA; IC=0; IC=2.5A;IB=0.8 A IC=2.5A;IB=0.8 A VCE=1500V;RBE=0 VEB=6V;IC=0 IC=0.5A ; VCE=5V IF=3A 50 10 MIN 6 TYP. 2SD898 SYMBOL V(BR)EBO VCEsat VBEsat ICES IEBO hFE VF MAX UNIT V 5.0 1.5 0.5 200 40 2.2 V V mA mA V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD898 Fig.2 Outline dimensions 3 |
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